Transistor mje 13007
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Transistor mje 13007
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WebIRFZ44 IRF Z44 55V 49A N-Channel Power MosFET IRFZ44N TO-220 Mos FET di Tokopedia ∙ Promo Pengguna Baru ∙ Cicilan 0% ∙ Kurir Instan. WebMJE13007 onsemi Bipolar Transistors - BJT 8A 400V 80W NPN datasheet, inventory & pricing. Skip to Main Content. 080 42650000. Contact Mouser (Bangalore) 080 …
WebTransistor MJE13009 MJE 13009 di Tokopedia ∙ Promo Pengguna Baru ∙ Cicilan 0% ∙ Kurir Instan. Beli Transistor MJE13009 MJE 13009 di Saturn Electronic Medan. Promo … Web22 rows · MJE13007 Datasheet POWER TRANSISTORS(8A,300-400V,80W) - Mospec Semiconductor NPN Power Transistor 8.0 Amperes 400 Volts 2 Watts, Micro …
WebMJE13007G – Bipolar (BJT) Transistor NPN 400 V 8 A 14MHz 80 W Through Hole TO-220 from onsemi. ... MJE13007: Environmental Information: onsemi RoHS. Material Declaration MJE13007G. onsemi REACH. PCN Design/Specification: TO-220 Case Outline Update 18/Sep/2014: PCN Assembly/Origin: WebMJE13007G – Bipolar (BJT) Transistor NPN 400 V 8 A 14MHz 80 W Through Hole TO-220 from onsemi. ... MJE13007: Environmental Information: onsemi RoHS. Material …
Web9557857. Data Sheet. +. RoHS. Date/Lot Code. Bipolar (BJT) Single Transistor, General Purpose, NPN, 400 V, 8 A, 80 W, TO-220, Through Hole. ONSEMI. Date and/or lot code …
WebMar 14, 2024 · APT13005D, MJE13007 . How To Use MJE13001. The MJE13001 is an NPN bipolar transistor featuring a high breakdown voltage of 600V between the collector and emitter and a medium emitter current of 200mA. The high breakdown voltage and current-carrying capability make it particularly suited for low-power SMPS and lamp ballasts. how to say happy birthday in marathiWebMJE 13007: Leaded Power Transistor General Purpose: Central Semiconductor: 15: MJE 13007: 80.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 8.000A Ic, 5 - 30 hFE. Continental Device India Limited: 16: MJE 13007: Switching Transistor: Korea Electronics (KEC) 17: MJE 13007: north heights preschool rosevilleWebApr 15, 2024 · The first test device is made with MJE13007 type transistors. These are NPN Bipolar Power Transistors which are designed for Switching Power Supply Applications. For the consumer, I used an LED lamp with a power of 8 and 10 watts. north heights school amarillo txWebMJE13007/D MJE13007 Switch-mode NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch−mode applications such as Switching north heights school amarilloWebMJE 13007 POWER TRANSISTOR CDIL Features Collector–Emitter Sustaining Voltage : 400 V. Collector–Emitter Breakdown Voltage : 700 V. Emitter–Base Voltage : 9.0 V. … north heights texarkana arWebUNISONIC TECHNOLOGIES CO., LTD MJE13007-M NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS … north heights restaurant amarilloWebMJE13007 Series NPN 80 W 400 V 8 A Through Hole Switching Transistor - TO-220-3. Buy onsemi MJE13007G in Tube. MJE13007 Series NPN 80 W 400 V 8 A Through Hole Switching Transistor - TO-220-3 from Future Electronics. text.skipToContent text.skipToNavigation. Americas USD ($) Region & Currency; Americas. Other … north heights vbs